Datasheet > CMHD3595_10

CMHD3595_10

更新时间： 2024-11-01 09:27:23

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
2页	368K
描述
SURFACE MOUNT LOW LEAKAGE SILICON DIODE

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CMHD3595_10 数据手册

CMHD3595

www.centralsemi.com

SURFACE MOUNT

LOW LEAKAGE

SILICON DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMHD3595 is a

Silicon Diode, manufactured by the epitaxial planar

process, epoxy molded in a surface mount package,

designed for high conductance applications requiring

low leakage.

MARKING CODE: C95

SOD-123 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Peak Working Reverse Voltage

Average Forward Current

150

125

RRM

RWM

150

Continuous Forward Current

Recurrent Peak Forward Current

Peak Forward Surge Current, tp=1.0s

Peak Forward Surge Current, tp=1.0μs

Power Dissipation

225

600

500

FSM

4.0

400

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

312.5

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =125V

MIN

MAX

1.0

UNITS

μA

V =125V, T =125°C

500

3.0

V =125V, T =150°C

V =30V, T =125°C

300

I =100μA

150

0.54

0.62

0.65

0.75

0.79

0.83

I =1.0mA

0.69

0.77

0.80

0.88

0.92

1.00

8.0

I =5.0mA

I =10mA

I =50mA

I =100mA

I =200mA

V =0, f=1.0MHz

μs

V =3.5V, I =10mA, R =1.0kΩ

3.0

R5 (5-August 2010)

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