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CMHD457ATR PDF预览

CMHD457ATR

更新时间: 2024-10-31 05:58:35
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 365K
描述
Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2

CMHD457ATR 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.51配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e0最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:70 V子类别:Rectifier Diodes
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL

CMHD457ATR 数据手册

 浏览型号CMHD457ATR的Datasheet PDF文件第2页 
CMHD457A  
CMHD459A  
www.centralsemi.com  
SURFACE MOUNT  
LOW LEAKAGE SILICON DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMHD457A,  
CMHD459A types are silicon planar diodes, epoxy  
molded in a SOD-123 surface mount package,  
designed for low leakage applications.  
MARKING CODES:  
CMHD457A: C7A  
CMHD459A: C9A  
SOD-123 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
CMHD457A  
CMHD459A  
200  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Peak Working Reverse Voltage  
Average Forward Current  
V
70  
60  
RRM  
V
175  
V
RWM  
I
200  
500  
4.0  
mA  
mA  
A
O
Continuous Forward Current  
Peak Forward Surge Current, tp=1.0µs  
Power Dissipation  
I
F
I
FSM  
P
400  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
312.5  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMHD457A  
CMHD459A  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
µA  
V
I
I
V =Rated V  
25  
5.0  
25  
5.0  
R
R
R
RWM  
RWM  
V =Rated V  
, T =150°C  
A
R
BV  
I =100µA  
70  
200  
R
R
V
I =100mA  
1.0  
1.0  
V
F
F
C
V =0, f=1.0MHz  
6.0  
6.0  
pF  
T
R
R2 (5-August 2010)  

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