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CMFSH-3I PDF预览

CMFSH-3I

更新时间: 2024-11-20 04:12:23
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 102K
描述
DUAL, ISOLATED SILICON SCHOTTKY DIODES

CMFSH-3I 数据手册

 浏览型号CMFSH-3I的Datasheet PDF文件第2页 
TM  
Central  
CMFSH-3i  
Semiconductor Corp.  
DUAL, ISOLATED  
SILICON SCHOTTKY DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMFSH-3i  
consists of two electrically isolated silicon  
Schottky diodes packaged in an epoxy molded  
SOT-143 surface mount case. This devices is  
designed fast switching applications requiring a  
low forward voltage drop.  
MARKING CODE: C3I  
SOT-143 CASE  
MAXIMUM RATINGS: (T =25 °C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
Power Dissipation  
V
30  
V
RRM  
I
I
I
100  
200  
750  
350  
mA  
mA  
mA  
mW  
F
FRM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T , T  
stg  
JA  
-65 to +150  
357  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25 °C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
µA  
V
V
V
V
pF  
ns  
I
I
V =25V  
90  
25  
500  
100  
R
R
R
V =25V, T =100 °C  
R
A
BV  
I =100µA  
30  
R
R
V
V
V
I =2.0mA  
0.29  
0.40  
0.74  
7.0  
0.33  
0.45  
1.00  
F
F
F
F
I =15mA  
F
I =100mA  
F
C
V =1.0V, f=1.0MHz  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
rr  
F
R
L
R3 (3-December 2003)  

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