Datasheet > CMFSH-3I_10

CMFSH-3I_10

更新时间： 2024-11-20 09:27:23

品牌	Logo	应用领域
CENTRAL		肖特基二极管
页数	文件大小	规格书
2页	422K
描述
SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES

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CMFSH-3I_10 数据手册

CMFSH-3i

www.centralsemi.com

SURFACE MOUNT

DUAL, ISOLATED

SILICON SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMFSH-3i

consists of two electrically isolated silicon Schottky

diodes packaged in an epoxy molded SOT-143 surface

mount case. This devices is designed fast switching

applications requiring a low forward voltage drop.

MARKING CODE: C3I

SOT-143 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=10ms

Power Dissipation

100

RRM

200

FRM

750

FSM

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =25V

MIN

TYP

MAX

500

UNITS

μA

V =25V, T =100°C

100

I =100μA

I =2.0mA

0.29

0.40

0.74

7.0

0.33

0.45

1.00

I =15mA

I =100mA

V =1.0V, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

R5 (13-August 2010)

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