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CMFSH-3IBKLEADFREE PDF预览

CMFSH-3IBKLEADFREE

更新时间: 2024-11-20 13:06:55
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 102K
描述
Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon, SOT-143, 4 PIN

CMFSH-3IBKLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-143
包装说明:SOT-143, 4 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.4
外壳连接:CATHODE配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.33 VJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向电流:100 µA最大反向恢复时间:0.005 µs
反向测试电压:25 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

CMFSH-3IBKLEADFREE 数据手册

 浏览型号CMFSH-3IBKLEADFREE的Datasheet PDF文件第2页 
TM  
Central  
CMFSH-3i  
Semiconductor Corp.  
DUAL, ISOLATED  
SILICON SCHOTTKY DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMFSH-3i  
consists of two electrically isolated silicon  
Schottky diodes packaged in an epoxy molded  
SOT-143 surface mount case. This devices is  
designed fast switching applications requiring a  
low forward voltage drop.  
MARKING CODE: C3I  
SOT-143 CASE  
MAXIMUM RATINGS: (T =25 °C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
Power Dissipation  
V
30  
V
RRM  
I
I
I
100  
200  
750  
350  
mA  
mA  
mA  
mW  
F
FRM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T , T  
stg  
JA  
-65 to +150  
357  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25 °C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
µA  
V
V
V
V
pF  
ns  
I
I
V =25V  
90  
25  
500  
100  
R
R
R
V =25V, T =100 °C  
R
A
BV  
I =100µA  
30  
R
R
V
V
V
I =2.0mA  
0.29  
0.40  
0.74  
7.0  
0.33  
0.45  
1.00  
F
F
F
F
I =15mA  
F
I =100mA  
F
C
V =1.0V, f=1.0MHz  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
rr  
F
R
L
R3 (3-December 2003)  

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