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CMC02

更新时间： 2024-11-02 03:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 257K
描述
For Strobe Discharge Circuit

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中文翻译

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CMC02 数据手册

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CMC02  
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE  
CMC02  
For Strobe Discharge Circuit  
Unit: mm  
•
•
•
•
•
Repetitive peak reverse voltage: V  
= 400 V  
RRM  
Average forward current: I  
= 1.0 A  
F (AV)  
Low forward voltage: V  
= 1.0 V (max.)  
FM  
Repetitive peak forward current: I  
= 150 A (Note 2)  
FRM  
Small surface-mount  
TM  
package, the “M−FLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
400  
V
A
RRM  
I
1.0 (Note 1)  
F (AV)  
Peak one-cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
150  
A
A
FSM  
Repetitive peak forward current  
(Note 2)  
I
FRM  
Junction temperature  
T
−40~150  
−40~150  
°C  
°C  
j
Storage temperature range  
T
stg  
JEDEC  
JEITA  
―
―
Note 1: Ta＝92°C  
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering land: 2 mm ×2 mm  
Board thickness: 0.64t  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Note 3: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Peak forward voltage  
Symbol  
Test Condition  
= 1.0 A (pulse test)  
FM  
Min  
Typ.  
Max  
Unit  
V
I
⎯
⎯
0.88  
1.0  
10  
V
FM (1)  
Peak repetitive reverse current  
I
V
= 400 V (pulse test)  
RRM  
⎯
μA  
RRM  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
⎯
⎯
⎯
⎯
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
110  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
⎯
⎯
⎯
⎯
180  
16  
Thermal resistance  
(junction to lead)  
R
th (j-ℓ)  
⎯
°C/W  
1
2006-11-06  
12345

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