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CM4209PBFREE

更新时间： 2024-11-18 13:06:51

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
2页	523K
描述
RF Small Signal Bipolar Transistor,

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技术参数
数据手册

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CM4209PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.68	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	50
JESD-609代码：	e3	最高工作温度：	200 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.2 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	标称过渡频率 (fT)：	850 MHz
Base Number Matches：	1

CM4209PBFREE 数据手册

CM4209

www.centralsemi.com

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CM4209 is a PNP

Saturated Switching Silicon Transistor designed for

high speed switching applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

CBO

CEO

EBO

4.5

200

500

Power Dissipation (T =25°C)

1.2

Operating and Storage Junction Temperature

T , T

-65 to +200

350

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

146

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=8.0V

CES

=8.0V, T =125°C

5.0

µA

CES

I =100µA

4.5

CBO

CES

I =100µA

I =3.0mA

CEO

I =100µA

EBO

I =1.0mA, I =100µA

0.15

0.18

0.60

0.80

0.86

1.5

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

I =50mA, I =5.0mA

I =1.0mA, I =100µA

I =10mA, I =1.0mA

0.69

I =50mA, I =5.0mA

=0.5V, I =1.0mA

=0.3V, I =10mA

120

=0.3V, I =10mA, T =-55°C

=1.0V, I =50mA

R0 (10-June 2011)

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