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CM4209TIN/LEAD PDF预览

CM4209TIN/LEAD

更新时间: 2024-10-30 13:06:51
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
2页 523K
描述
RF Small Signal Bipolar Transistor,

CM4209TIN/LEAD 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.75
Is Samacsys:NJESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

CM4209TIN/LEAD 数据手册

 浏览型号CM4209TIN/LEAD的Datasheet PDF文件第2页 
CM4209  
www.centralsemi.com  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CM4209 is a PNP  
Saturated Switching Silicon Transistor designed for  
high speed switching applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
15  
15  
CBO  
CEO  
EBO  
V
V
4.5  
I
200  
mA  
mW  
W
C
P
500  
D
D
Power Dissipation (T =25°C)  
C
P
1.2  
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
350  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
146  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=8.0V  
10  
nA  
CES  
CE  
I
V
=8.0V, T =125°C  
5.0  
µA  
V
V
V
V
V
V
V
V
V
V
CES  
CE  
A
BV  
BV  
BV  
BV  
I =100µA  
15  
15  
15  
4.5  
CBO  
CES  
C
I =100µA  
C
I =3.0mA  
CEO  
C
I =100µA  
EBO  
E
V
V
V
V
V
V
I =1.0mA, I =100µA  
0.15  
0.18  
0.60  
0.80  
0.86  
1.5  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
C
B
I =50mA, I =5.0mA  
C
B
I =1.0mA, I =100µA  
C
B
I =10mA, I =1.0mA  
0.69  
C
B
I =50mA, I =5.0mA  
C
B
h
h
h
h
V
=0.5V, I =1.0mA  
35  
50  
20  
40  
CE  
CE  
CE  
CE  
C
V
V
V
=0.3V, I =10mA  
120  
FE  
C
=0.3V, I =10mA, T =-55°C  
FE  
C
A
=1.0V, I =50mA  
FE  
C
R0 (10-June 2011)  

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