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CM20AD05-12H PDF预览

CM20AD05-12H

更新时间: 2024-02-24 01:07:37
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
4页 73K
描述
MITSUBISHI IGBT MODULES

CM20AD05-12H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-P26
Reach Compliance Code:unknown风险等级:5.87
Is Samacsys:N其他特性:3PHASE DIODE RECTIFIER, THERMISTOR, BRAKE AND INVERTER AVAILABLE IN A MODULE
外壳连接:ISOLATED最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-P26
元件数量:7端子数量:26
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:PIN/PEG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):200 ns
标称接通时间 (ton):120 nsVCEsat-Max:2.8 V
Base Number Matches:1

CM20AD05-12H 数据手册

 浏览型号CM20AD05-12H的Datasheet PDF文件第2页浏览型号CM20AD05-12H的Datasheet PDF文件第3页浏览型号CM20AD05-12H的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM20AD00-12H  
MEDIUM POWER SWITCHING USE  
FLAT BASE, INSULATED TYPE  
CM20AD00-12H  
¡IC ..................................................................... 20A  
¡VCES ............................................................600V  
¡Insulated Type  
¡CIB Module  
3φ Inverter + 3φ Converter + Brake  
Thyristor + Thermistor + Current shunt  
resistor  
APPLICATION  
AC & DC motor controls, General purpose inverters  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
100  
90±0.25  
0.8  
1
2.54 2.54 2.54  
7.62 7.62  
2-φ4.5±0.25 MOUNTING HOLES  
12 13  
7.5  
8
8
8
8
8
8
GT  
GUP  
EUP  
t=0.6  
N
P2  
EVP  
GVP EWP  
GWP  
5
P1 N1  
P
P P S  
MAIN CIRCUIT TERMINAL  
0.6  
t=0.6  
PPS  
CONTROL CIRCUIT TERMINAL  
R
S
8
T
8
B
8
U
V
8
W
8
GB  
GUN  
2-R5  
TH1  
8
TH2  
E
GVN  
GWN  
P1 GT  
P2  
P
7.5  
8
8
2.54  
2.54  
2.54  
2.54  
2.54  
GUP  
GVP  
EVP  
GWP  
EWP  
R
S
T
B
EUP  
90±0.3  
GB  
GUN  
GVN  
GWN  
LABEL  
(sense terminal)  
TH1 TH2  
E
N1  
N U  
V
W
CIRCUIT DIAGRAM  
Sep. 2000  

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