Datasheet > CM20N65AHP

CM20N65AHP

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1208K
描述
TO-220

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CM20N65AHP 数据手册

CM20N65AHP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM20N65AHP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage planar technology. This high density process

and design have been optimized switching performance

and especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

ID (@VGS=10V): 20A

20N65AHX

XXXX

RDS_ON(@VGS=10V) : < 0.42Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

TO-220F

P/N

Package Type Packaging

Remark

ROHS

CM20N65AHP

CM20N65AHF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM20N65AHP CM20N65AHF

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

20⁽⁴⁾

12⁽⁴⁾

80⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

357

2.9

0.35

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.47

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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