Datasheet > CM04N65AD

CM04N65AD

更新时间： 2024-05-23 22:21:33

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1235K
描述
TO-251

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CM04N65AD 数据手册

CM04N65AU/D

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM04N65AU/D is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

ID (@VGS=10V): 4A

04N65AX

XXXX

RDS_ON(@VGS=10V) : < 3Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

TO-252

TO-251

CM04N65AU

CM04N65AD

TO-252

TO-251

Tape and reel

Tube

G D

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM04N65AU CM04N65AD

VDS

VGS

650

Gate-source Voltage

±30

Tc=25°C

2.1

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current ⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.63

1.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jul. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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