Datasheet > CHA1008-99F

CHA1008-99F

更新时间： 2024-10-15 01:17:15

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
8页	239K
描述
80-105GHz Balanced Low Noise Amplifier

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中文翻译

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CHA1008-99F 数据手册

CHA1008-99F

80-105GHz Balanced Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA1008-99F is

broadband,

balanced, four-stage monolithic low noise

amplifier.

It is designed for Millimeter-Wave Imaging

applications and can be use in commercial

digital radios and wireless LANs.

OUT

The circuit is manufactured on a pHEMT

process, 0.10µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

It is available in chip form.

Gain and Noise Figure

Main Features

■ Broadband performances: 80-105GHz

■ Balanced configuration

■ 16dB linear gain from 80 to 90GHz

■ 5dB noise figure from 80 to 90GHz

■ DC bias: VD=2.5V@ ID=115mA

■ Chip size 3.40x1.60x0.07mm

Gain

78 80 82 84 86 88 90 92 94 96 98 100 102 104 106

Frequency (GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Gain

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

105

Linear Gain (from 80 to 90GHz)

Noise Figure (from 80 to 90GHz)

Output Power @1dB comp.

Pout

dBm

Ref. : DSCHA10082128 - 07 May 12

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7 8

中文翻译

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