Datasheet > CHA1077A

CHA1077A

更新时间： 2024-10-14 03:25:27

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
8页	509K
描述
W-band Low Noise Amplifier

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CHA1077A 数据手册

CHA1077a

RoHS COMPLIANT

W-band Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA1077a is a W-band monolithic 3-

stages low noise amplifier. All the active

devices are internally self-biased. This chip is

compatible with automatic equipment for

assembly.

OUT

The circuit is manufactured on P-HEMT

process: 0.15µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

-V

W-band amplifier block-diagram

It is available in chip form.

Main Features

ꢀ W-band low noise amplifier

ꢀ High gain

ꢀ Wide operating frequency range

ꢀ High temperature range

ꢀ On-chip self biasing

ꢀ Additional external resistor allows to

choose getting more gain instead of a

minimum noise factor

ꢀ Automatic assembly oriented

ꢀ Low DC power consumption

ꢀ BCB layer protection

ꢀ

Chip size: 2.6 x 1.32 x 0.1mm

Small signal gain

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Operating frequency

Small signal gain

Noise figure

Output power at 1dB gain compression

Min

Typ

Max

Unit

GHz

dBm

F_op

G_lin

4.5

P_1dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

Ref. DSCHA1077a6013 - 13 Jan 06

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

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