Datasheet > CGY2272UH

CGY2272UH

更新时间： 2024-11-22 14:53:27

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	444K
描述
Low Noise Amplifier

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数据手册

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CGY2272UH 数据手册

Low Noise Amplifier

44 - 69 GHz

CGY2272UH

Rev. V1

Features

Block Diagram

•

Gain: 29 dB

Noise Figure: <1.7 dB

ROBUSTMax 1.5 dBm in CW Input Power

Single Positive & Negative Supply

V_DD= 1.5 V

V_SS= 1.5 V

I_DD= 46 mA

•

50 Ω Input & Output Matched

Chip Size: 2.35 x 1.2 mm

Tested, Inspected Known Good Die (KGD)

Space and MIL-STD MMICs

RoHS* Compliant

Applications

•

Radar

Telecommunication

Instrumentation

Space

Description

The CGY2272UH is a high-performance GaAs low

noise amplifier MMIC designed to operate in the

V-Band.

Ordering Information

Part Number

The die is manufactured using an advanced 70 nm

gate length high indium contains mHEMT

technology (D007IH). The MMIC uses gold bonding

pads and backside metallization and is fully

protected with silicon nitride passivation to obtain the

highest level of reliability.

Package

die

CGY2272UH

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0029654

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