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CGY2350UH PDF预览

CGY2350UH

更新时间: 2024-11-22 14:55:11
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
11页 898K
描述
5-Bit, Ka-Band Core Chip

CGY2350UH 数据手册

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5-Bit, Ka-Band Core Chip  
34 - 36 GHz  
CGY2350UH/C1  
Rev. V1  
Features  
Block Diagram  
Gain: 4 dB (Rx), 3 dB (Tx)  
Noise Figure: 6 dB (Rx)  
RMS Phase Error: 5°  
RMS Amplitude Error: 0.4 dB (Tx), 0.6 dB (Rx)  
Output P1dB: 10 dBm (Tx)  
Input Return Loss: -11 dB (Rx), -13 dB (Tx)  
Output Return Loss: -13 dB (Rx), -8 dB (Tx)  
Total Power Consumption: 250 mW @ 3.3 V  
Chip Size: 3000 x 4700 µm  
Tested, Inspected Known Good Die (KGD)  
RoHS* Compliant  
Applications  
Radar, Antennas  
Telecommunication  
Instrumentation  
Description  
The CGY2350UH/C1 is a high performance  
pHEMT technology GaAs MMIC 5-bit core chip  
operating in Ka-band. It exhibits 2 RF ports  
including 2 switches. It includes a 5-bit digital  
phase shifter, a 5-bit digital attenuator, and  
switches. It has a phase shifting range of 348° and  
a gain setting range of 15.5 dB. It covers the  
frequency range from 34 to 36 GHz.  
The on-chip control logic with serial input register  
minimizes the number of bonding pads and greatly  
simplifies the interfacing to this device.  
Ordering Information  
Part Number  
CGY2350UH/C1  
CGY2350UH/C1/EK  
Package  
This die is manufactured using 0.18 µm gate length  
ED02AH pHEMT Technology. The MMIC uses gold  
bond pads and backside metallization and is fully  
protected with Silicon Nitride passivation to obtain  
the highest level of reliability. This technology has  
been evaluated for Space applications and is on the  
European Preferred Parts List of the European  
Space Agency.  
On wafer measured die  
Evaluation Board  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology SolutionsInc. (MACOM ) anditsaffiliatesreservetherightto makechangestotheproduct(s)orinformationcontained herein withoutnotice.  
Forfurtherinformation andsupport pleasevisit: https://www.macom.com/support  
DC-0029666  

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