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CGD1042HI,112 PDF预览

CGD1042HI,112

更新时间: 2024-11-23 20:05:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
8页 65K
描述
CGD1042HI - 1 GHz, 22 dB gain GaAs high output power doubler SFM 7-Pin

CGD1042HI,112 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
针数:7Reach Compliance Code:compliant
风险等级:5.83功能数量:1
封装主体材料:PLASTIC/EPOXY封装等效代码:SOT-115J
电源:24 V子类别:RF/Microwave Amplifiers
最大压摆率:460 mA技术:HYBRID
Base Number Matches:1

CGD1042HI,112 数据手册

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CGD1042HI  
1 GHz, 22 dB gain GaAs high output power doubler  
Rev. 2 — 29 September 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of  
24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.  
1.2 Features and benefits  
Excellent linearity  
Superior levels of ESD protection  
Extremely low noise  
Excellent return loss properties  
Gain compensation over temperature  
Rugged construction  
Unconditionally stable  
Thermally optimized design  
Compliant with Directive 2002/95/EC, regarding Restriction of the use of certain  
Hazardous Substances (RoHS)  
Integrated ring wave surge protection  
1.3 Applications  
CATV systems operating in the 40 MHz to 1003 MHz frequency range  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75; Tmb = 35 C; unless otherwise  
specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
Gp  
power gain  
f = 50 MHz  
-
21.5 -  
dB  
f = 1003 MHz  
22  
-
22.7 23.5 dB  
[1]  
[1]  
[2]  
CTB  
CCN  
Itot  
composite triple beat  
Vo = 56.4 dBmV at 1003 MHz  
75 65 dBc  
carrier-to-composite noise Vo = 56.4 dBmV at 1003 MHz  
total current  
57  
-
63  
-
dBc  
440 460 mA  
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset);  
tilt extrapolated to 13.5 dB at 1003 MHz.  
[2] Direct Current (DC).  
 
 
 
 
 
 
 

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