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CGD1042L PDF预览

CGD1042L

更新时间: 2024-11-19 20:55:15
品牌 Logo 应用领域
恩智浦 - NXP 高功率电源放大器射频微波功率放大器
页数 文件大小 规格书
9页 91K
描述
RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER

CGD1042L 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82射频/微波设备类型:WIDE BAND HIGH POWER
Base Number Matches:1

CGD1042L 数据手册

 浏览型号CGD1042L的Datasheet PDF文件第2页浏览型号CGD1042L的Datasheet PDF文件第3页浏览型号CGD1042L的Datasheet PDF文件第4页浏览型号CGD1042L的Datasheet PDF文件第5页浏览型号CGD1042L的Datasheet PDF文件第6页浏览型号CGD1042L的Datasheet PDF文件第7页 
CGD1042L  
1 GHz, 23 dB gain GaAs low current power doubler  
Rev. 1 — 10 March 2014  
Product data sheet  
1. Product profile  
1.1 General description  
Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V  
Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.  
1.2 Features and benefits  
Low power consumption  
Excellent linearity  
Extremely low noise  
Excellent return loss properties  
Gain compensation over temperature  
Rugged construction  
Unconditionally stable  
Thermally optimized design  
Adjustable supply current  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
CATV systems operating in the 40 MHz to 1 GHz frequency range.  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Bandwidth 40 MHz to 1006 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb = 35 C; unless otherwise  
specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
Gp  
power gain  
f = 50 MHz  
20.5 21.5 22.5 dB  
f = 1006 MHz  
22  
-
23  
24  
dB  
[1][2]  
[1][2]  
CTB  
CSO  
composite triple beat  
Vo = 51 dBmV at 550 MHz  
Vo = 51 dBmV at 550 MHz  
61 56 dBc  
68 64 dBc  
composite second-order  
distortion  
-
[3]  
[3]  
Itot  
total current  
pin 4 not connected  
355 375 395 mA  
330 mA  
pin 4 connected to ground  
-
-
[1] 77 NTSC; [f = 54 MHz to 550 MHz]; flat Vo till 550 MHz.  
[2] pin 4 not connected.  
[3] Direct Current (DC).  

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