Datasheet > CGD12HBXMP

CGD12HBXMP

更新时间： 2024-11-24 01:25:55

品牌	Logo	应用领域
科锐 - CREE		栅
页数	文件大小	规格书
10页	620K
描述
Dual Channel Differential Isolated Gate Driver XM3 CPM3 SiC Half-Bridge Module Companion Tool

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中文翻译

获取价格

数据手册

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CGD12HBXMP 数据手册

V_Drive

I_G

+15/-4V

1ꢀ ꢁ

CGD12HBXMP

Dual Channel Diﬀerential Isolated Gate Driver

XM3 CPM3 SiC Half-Bridge Module Companion Tool

R_G

1 Ω

Technical Features

Package

•

Optimized for use with Cree’s High-

Performance XM3 Half Bridge Power Modules

High-Frequency, Ultra-Fast Switching

Operation

•

On-Board 2 W Isolated Power Supplies

Primary OVLO and UVLO with Hysteresis

On-Board Overcurrent, Shoot-Through, and

Reverse Polarity Protection

•

Diﬀerential Inputs for Increased Noise

Immunity

•

Very Low Isolation Capacitance

Single-Ended to Diﬀerential Daughter Board

Available Upon Request (CGD12HB00D)

ꢁpplications

•

DC Bus Voltages up to 1000 V

Maximum Ratings

Symbol

Parameter

Value

-0.5 to 13.2

-0.5 to 5.5

Unit

V_DC

V_I

Supply Voltage

Logic Level Inputs

I_O

Output Peak Current (T_A= 25 °C)

P_Drive

Output Power per Channel (T_A= 25 °C)

Maximum Switching Frequency

(Module & MOSFET Dependent, see Power

Estimate Section)

f_S

kHz

°C

T_op

T_stg

Ambient Operating Temperature

-50 to 85

-50 to 125

Storage Temperature

Rev. A, 2019-06-01

CGD12HBXMP

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

12 3 4 5 6 7...10

中文翻译

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