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CFC2026GR

更新时间： 2024-09-26 03:25:19

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	100K
描述
NPN SILICON PLANAR POWER TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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CFC2026GR 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CFC2026GR 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR POWER TRANSISTOR

CFC2026

TO-220FP Fully Isolated

Plastic Package

Complementary CFA1046

ABSOLUTE MAXIMUM RATINGS

VALUE

UNIT

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

Collector Base Voltage

Collector Emitter Voltage

7.0

3500

1500

3.0

V_RMS

Emitter Base Voltage

** V_ISOL(a)

RMS Isolation Voltage (for 1sec, R.H.

<30%, T_a= 25^oC)

(b)

I_C

Collector Current

I_B

0.5

Base Current

Collector Power Dissipation @T_a=25^oC

@T_c=25^oC

P_C

2.0

T_j

150

ºC

Junction Temperature

T_stg

- 55 to 150

ºC

Storage Temperature Range

** RMS Isolation Voltage: (a) 3500 V_RMSwith Package in Clip Mounting Position (b) 1500 V_RMSwith Package

in Screw Mounting Position (for 1sec, R.H.<30%, T_a=25^oC; Pulse Test: Pulse Width <300ms, Duty Cycle<2%)

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

I_CBO

TEST CONDITION

V_CB= 60V, I_E=0

V_EB= 7V, I_C=0

MIN

TYP MAX UNIT

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Voltage

DC Current Gain

100

I_EBO

V_CEO

*h_FE

I_C= 50mA, I_B=0

V_CE= 5V, I_C= 0.5A

I_C= 2A, I_B= 0.2A

100

300

V_CE(sat)

V_BE(on)

f_T

Collector Emitter Saturation Voltage

Base Emitter On Voltage

Transition Frequency

V_CE= 5V, I_C= 0.5A

V_CB= 10V, I_E=0, f=1MHz

MHz

C_ob

Collector Output Capacitance

Switching Time

Turn On Time

Storage Time

Fall Time

t_on

t_stg

t_f

I_B1= I_B2= 0.2A

V_CC= 30V

0.65

1.30

0.65

Duty Cycle < 1%

*h_FEClassification

Y : 100 - 200

GR : 150 - 300

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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