Datasheet > CEU4269_10

CEU4269_10

更新时间： 2022-10-21 09:42:45

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	586K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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CEU4269_10 数据手册

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

D1/D2

40V , 14A , R_DS(ON)= 32mΩ @V_GS= 10V.

R_DS(ON)= 46mΩ @V_GS= 4.5V.

-40V , -12A , R_DS(ON)= 45mΩ @V_GS= 10V.

R_DS(ON)= 65mΩ @V_GS= 4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

D1/D2

Lead free product is acquired.

TO-252-4L package.

CEU SERIES

TO-252-4L

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Units

Drain-Source Voltage

V_DS

±20

-12

-48

Gate-Source Voltage

V_GS

Drain Current-Continuous ^e

Drain Current-Pulsed ^a

I_D

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

10.4

0.08

P_D

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 2. 2010.Aug

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4 5 6 7

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