Datasheet > CEU4269_10

CEU4269_10

更新时间： 2022-10-21 09:42:45

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	586K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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数据手册

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CEU4269_10 数据手册

CEU4269

P-CHANNEL

25 C

-V_GS=10,7,6V

-V_GS=5.

-V_GS=4.

-V_GS=3.

T_J=125 C

-55 C

-VDS, Drain-to-Source Voltage (V)

-VGS, Gate-to-Source Voltage (V)

Figure 7. Output Characteristics

Figure 8. Transfer Characteristics

1500

1250

1000

750

500

250

2.2

1.9

1.6

1.3

1.0

0.7

0.4

I_D=-5A

V_GS=-10V

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-100

-50

100

150

200

-VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 9. Capacitance

Figure 10. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

_GS=0V

I_D=-250µA

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

-VSD, Body Diode Forward Voltage (V)

Figure 11. Gate Threshold Variation

with Temperature

Figure 12. Body Diode Forward Voltage

Variation with Source Current

1 2 3 456 7

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