CEP93A3/CEB93A3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V.
RDS(ON) = 6.0 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
150
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
600
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
83.3
0.67
1058
46
W
PD
W/ C
mJ
A
EAS
IAS
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
1.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Rev 2. 2010.Sep.
http://www.cetsemi.com
Details are subject to change without notice .
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