Datasheet > CEPF630_07

CEPF630_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	379K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEPF630_07 数据手册

CEPF630/CEBF630

CEFF630

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

200V

R_DS(ON)

0.35Ω

I_D

@V_GS

10V

CEPF630

CEBF630

CEFF630

10A

10A ^d

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

CEP SERIES

TO-263(DD-PAK)

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

I_D

200

Gate-Source Voltage

±20

0.6

10 ^d

40 ^d

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.27

W/ C

Operating and Store Temperature Range

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.5

62.5

3.7

RθJA

Rev 2. 2007.March

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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