Datasheet > CEPF640_08

CEPF640_08

更新时间： 2022-10-21 09:36:03

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	398K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEPF640_08 数据手册

CEPF640/CEBF640

CEFF640

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

200V

R_DS(ON)

0.15Ω

I_D

@V_GS

10V

CEPF640

CEBF640

CEFF640

19A

19A ^d

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 & TO-220F full-pak for through hole.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

I_D

200

Gate-Source Voltage

±20

19 ^d

76 ^d

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

125

1.0

P_D

0.32

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.0

62.5

3.1

RθJA

Rev 3. 2008.Oct.

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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