Datasheet > CEP93A3

CEP93A3

更新时间： 2022-10-21 09:36:01

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	396K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEP93A3 数据手册

CEP93A3/CEB93A3

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 30V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

µA

I_GSSF

IGSSR

-10

Gate Threshold Voltage

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= 250µA

V_GS= 10V, I_D= 50A

V_GS= 4.5V, I_D= 40A

Static Drain-Source

2.3

mΩ

On-Resistance

Dynamic Characteristics ^c

Forward Transconductance

g_FS

C_iss

C_oss

C_rss

V_DS= 10V, I_D= 15A

4100

980

600

Input Capacitance

V_DS= 15V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

Turn-On Rise Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 15V, I_D= 1A,

V_GS= 10V, R_GEN= 6Ω

Turn-Off Delay Time

Turn-Off Fall Time

128

Total Gate Charge

Q_g

V_DS= 15V, I_D= 16A,

V_GS= 5V

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

100

1.2

V_SD

V_GS= 0V, I_S= 20A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 1mH, I =46A, V = 24V, R = 25Ω, Starting T = 25 C

123 4

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