Datasheet > CEP02N6

CEP02N6

更新时间： 2024-02-19 21:01:08

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	76K
描述
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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CEP02N6 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEP02N6 数据手册

CEP02N6/CEB02N6

2.2

600

I^D=1A

VGS=10V

1.9

500

400

300

1.6

1.3

Ciss

200

100

1.0

Coss

Crss

0.7

0.4

-100

-50

100

200

150

TJ, Junction Temperature( C)

VDS, Drain-to Source Voltage (V)

Figure 4. On-Resistance Variation with

Temperature

Figure 3. Capacitance

1.15

1.30

ID=250ӴA

DS=VGS

=250ӴA

1.10

1.20

1.10

1.05

1.00

0.90

0.95

0.90

0.85

0.80

0.70

0.60

-50 -25

25 50 75 100 125 150

-50 -25

25 50 75 100 125 150

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

GS=0V

DS=50V

0.1

0.4

1.2

0.6

1.0

0.8

IDS, Drain-Source Current (A)

VSD, Body Diode Forward Voltage (V)

Figure 7. Transconductance Variation

with Drain Current

Figure 8. Body Diode Forward Voltage

Variation with Source Current

4-5

1 2 345

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