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CEN1081 PDF预览

CEN1081

更新时间: 2024-11-07 19:59:47
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 110K
描述
TRANSISTOR 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACAKGE-3, BIP General Purpose Small Signal

CEN1081 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC PACAKGE-3
针数:3Reach Compliance Code:unknown
风险等级:5.88Base Number Matches:1

CEN1081 数据手册

 浏览型号CEN1081的Datasheet PDF文件第2页 
TM  
Central  
CEN1081  
Semiconductor Corp.  
SURFACE MOUNT PNP  
HIGH VOLTAGE  
SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CEN1081  
is a selected version of the CMPTA94 surface  
mount epoxy molded PNP silicon planar epitaxial  
transistor, designed for extremely high voltage  
applications, for customer IFM Electronic.  
MARKING CODE: C94  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
400  
400  
6.0  
300  
350  
CBO  
CEO  
EBO  
V
V
mA  
mW  
I
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
500  
100  
UNITS  
nA  
nA  
nA  
V
I
I
I
V
V
V
=350V  
=350V  
=4.0V  
CBO  
CES  
EBO  
CBO  
CES  
CEO  
EBO  
CB  
CE  
BE  
BV  
BV  
BV  
BV  
V
V
V
V
h
h
h
h
h
I =100µA  
400  
400  
400  
6.0  
C
I =100µA  
V
C
I =1.0mA  
V
C
I =10µA  
V
E
I =1.0mA, I =0.1mA  
0.40  
0.50  
0.75  
0.75  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
V
C
B
B
C
C
I =10mA, I =1.0mA  
V
C
V
=10V, I =1.0mA  
40  
100  
100  
45  
20  
20  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
V
V
V
V
V
V
V
=10V, I =2.0mA  
FE  
=10V, I =10mA  
200  
FE  
C
=10V, I =50mA  
FE  
C
=10V, I =100mA  
FE  
C
f
C
C
=10V, I =10mA, f=10MHz  
MHz  
pF  
pF  
T
C
=20V, I =0, f=1.0MHz  
7.0  
130  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
C
R1 (27-October 2003)  

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