Datasheet > CEN1155

CEN1155

更新时间： 2024-01-17 12:28:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	143K
描述
TRANSISTOR 0.6 A, 200 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-4, BIP General Purpose Power

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技术参数
数据手册

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CEN1155 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-4
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.77	Base Number Matches：	1

CEN1155 数据手册

Central

CEN1155

Semiconductor Corp.

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN1155 is

a selected version of the CZT5551 Surface

Mount NPN silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

voltage amplifier applications.

This device is selected for a minimum V

CBO

and

of 200 volts for customer Broadcom

CEO

SOT-223 CASE

Corporation.

MARKING CODE: FULL PART NUMBER

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

6.0

CBO

CEO

EBO

600

2.0

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

62.5

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

µA

CBO

=120V, T =100°C

=4.0V

CBO

EBO

I =100µA

200

6.0

CBO

I =1.0mA

CEO

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

I =50mA, I =5.0mA

CE(SAT)

I =10mA, I =1.0mA

BE(SAT)

I =50mA, I =5.0mA

BE(SAT)

R0 (16-May 2006)

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