Datasheet > CDSV3-21-G

CDSV3-21-G

更新时间： 2024-11-16 12:50:19

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	59K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDSV3-21-G 数据手册

SMD Switching Diode

CDSV3-19-G/20-G/21-G

High Speed

RoHS Device

Features

SOT-323

-Fast switching diode.

0.087(2.20)

0.070(1.80)

-Surface mount package ideally for automatic

insertion.

0.054(1.35)

0.045(1.15)

-For general purpose switching applications.

-High conductance.

0.006(0.15)

0.002(0.05)

0.056(1.40)

0.047(1.20)

Mechanical data

-Case: SOT-323

0.087(2.20)

0.078(2.00)

0.044(1.10)

0.035(0.90)

-Terminals: Solder plated, solderable per MIL-

STD-750, Method 2026.

0.004(0.10)max.

0.004(0.10)min.

-Marking: CDSV3-19-G KA8

CDSV3-20-G KT2

0.016(0.40)

0.008(0.20)

CDSV3-21-G KT3

Dimensions in inches and (millimeters)

Maximum Rating (at Ta=25°C unless otherwise noted)

Unit

Parameter

Value

200

Symbol

Power dissipation

Forward current

Reverse voltage

200

CDSV3-19-G

CDSV3-20-G

CDSV3-21-G

120

150

200

^OC

Junction and storage temperature

TJ , TSTG

-55 ~ +150

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Max

0.1

Unit

Symbol

Min

Parameter

Test Conditions

CDSV3-19-G

CDSV3-20-G

CDSV3-21-G

100

150

200

Reverse breakdown voltage

V(BR)R

IR=100uA

CDSV3-19-G

CDSV3-20-G

CDSV3-21-G

VR=100V

VR=150V

VR=200V

Reverse leakage current

Forward voltage

IF=100mA

IF=200mA

1.25

Diode capacitance

VR=0V, f=1MHZ

trr

Reverse recovery time

IF=IR=30mA, Irr=0.1XIR

REV:A

Page 1

QW-B0025

中文翻译

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