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CDSV3-21-G PDF预览

CDSV3-21-G

更新时间: 2024-11-16 12:50:19
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
2页 59K
描述
SMD Switching Diode

CDSV3-21-G 数据手册

 浏览型号CDSV3-21-G的Datasheet PDF文件第2页 
SMD Switching Diode  
CDSV3-19-G/20-G/21-G  
High Speed  
RoHS Device  
Features  
SOT-323  
-Fast switching diode.  
0.087(2.20)  
0.070(1.80)  
-Surface mount package ideally for automatic  
insertion.  
3
0.054(1.35)  
0.045(1.15)  
-For general purpose switching applications.  
-High conductance.  
1
2
0.006(0.15)  
0.002(0.05)  
0.056(1.40)  
0.047(1.20)  
Mechanical data  
-Case: SOT-323  
0.087(2.20)  
0.078(2.00)  
0.044(1.10)  
0.035(0.90)  
-Terminals: Solder plated, solderable per MIL-  
STD-750, Method 2026.  
0.004(0.10)max.  
0.004(0.10)min.  
-Marking: CDSV3-19-G KA8  
CDSV3-20-G KT2  
0.016(0.40)  
0.008(0.20)  
CDSV3-21-G KT3  
Dimensions in inches and (millimeters)  
Maximum Rating (at Ta=25°C unless otherwise noted)  
Unit  
Parameter  
Value  
200  
Symbol  
Power dissipation  
PD  
mW  
mA  
Forward current  
Reverse voltage  
IF  
200  
CDSV3-19-G  
CDSV3-20-G  
CDSV3-21-G  
120  
150  
200  
VR  
V
OC  
Junction and storage temperature  
TJ , TSTG  
-55 ~ +150  
Electrical Characteristics (at Ta=25°C unless otherwise noted)  
Max  
0.1  
Unit  
V
Symbol  
Min  
Parameter  
Test Conditions  
CDSV3-19-G  
CDSV3-20-G  
CDSV3-21-G  
100  
150  
200  
Reverse breakdown voltage  
V(BR)R  
IR=100uA  
CDSV3-19-G  
CDSV3-20-G  
CDSV3-21-G  
VR=100V  
VR=150V  
VR=200V  
Reverse leakage current  
Forward voltage  
IR  
UA  
V
IF=100mA  
IF=200mA  
1
1.25  
VF  
Diode capacitance  
pF  
nS  
VR=0V, f=1MHZ  
CD  
trr  
5
Reverse recovery time  
IF=IR=30mA, Irr=0.1XIR  
50  
REV:A  
Page 1  
QW-B0025  

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