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CDSOD323-T24C PDF预览

CDSOD323-T24C

更新时间: 2024-12-01 04:11:59
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器二极管电视光电二极管局域网
页数 文件大小 规格书
4页 318K
描述
CDSOD323-TxxC - TVS Diode Array Series

CDSOD323-T24C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:10 weeks风险等级:1.71
其他特性:LOW CAPACITANCE最小击穿电压:26.7 V
击穿电压标称值:26.7 V最大钳位电压:56 V
配置:COMMON BIPOLAR TERMINAL, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:350 W元件数量:2
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:24 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDSOD323-T24C 数据手册

 浏览型号CDSOD323-T24C的Datasheet PDF文件第2页浏览型号CDSOD323-T24C的Datasheet PDF文件第3页浏览型号CDSOD323-T24C的Datasheet PDF文件第4页 
Features  
Applications  
Lead free as standard (RoHS compliant*)  
Protects 1 line or 1 I/O port  
Bidirectional configuration  
ESD protection >40 kV  
Cell phones  
PDAs and notebooks  
Digital cameras  
MP3 players and GPS  
USB interface  
Low capacitance ~3 pF typical  
Replaces 0805 MLV devices  
CDSOD323-TxxC – TVS Diode Array Series  
General Information  
The markets of portable communications, computing and video equipment are  
challenging the semiconductor industry to develop increasingly smaller electronic  
components.  
UNIDIRECTIONAL  
1
BIDIRECTIONAL  
1
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD  
protection applications, in SOD323 package size format. The Transient Voltage  
Supressor Array series offers a choice of voltage types ranging from 3 V to 24 V in a  
unidirectional or bidirectional configuration. Bourns® Chip Diodes conform to JEDEC  
standards, are easy to handle on standard pick and place equipment and their flat  
configuration minimizes roll away.  
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
61000-4-5 (Surge) requirements.  
2
2
Electrical & Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
PPP  
Value  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Operating Temperature  
Storage Temperature  
350  
TJ  
-55 ˚C to 150 ˚C  
˚C  
TSTG  
-55 ˚C to 150 ˚C  
˚C  
CDSOD323-  
Parameter  
Symbol  
Uni-  
T03  
Bi-  
T03C  
Uni-  
T05  
Bi-  
T05C  
Uni-  
T08  
Bi-  
T08C  
Uni-  
T12  
Bi-  
T12C  
Unit  
Min. Breakdown Voltage @ 1 mA  
Working Peak Voltage  
VBR  
VWM  
VF  
4.0  
3.3  
7.0  
4.0  
3.3  
7.0  
6.0  
5.0  
9.8  
6.0  
5.0  
9.8  
8.5  
8.0  
8.5  
8.0  
13.3  
12.0  
19.0  
13.3  
12.0  
19.0  
V
V
V
Maximum Clamping Voltage @ I = 1 A  
P
13.4  
13.4  
Maximum Clamping Voltage  
19.0 V 19.0 V 18.3 V 18.3 V 18.5 V 18.5 V 28.3 V 28.3 V  
@ 20 A @ 20 A @ 17 A @ 17 A @ 17 A @ 17 A @ 11 A @ 11 A  
VC  
V
@ 8/20 µs @ I  
PP  
Maximum Leakage Current @ V  
ID  
5
5
5
5
2
2
1
1
µA  
WM  
Typical Capacitance @ 0 V, 1 MHz  
CJ  
3
pF  
Notes:  
1. Part numbers with suffix “C” indicate bidirectional device, i.e. CDSOD323-T05C.  
2. For bidirectional devices only, the electrical specifications apply in both directions.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

CDSOD323-T24C 替代型号

型号 品牌 替代类型 描述 数据表
CDSOD323-T24LC BOURNS

完全替代

CDSOD323-TxxLC - TVS Diode Series
CDSOD323-T12C BOURNS

类似代替

CDSOD323-TxxC - TVS Diode Array Series
CDSOD323-T05C BOURNS

类似代替

CDSOD323-TxxC - TVS Diode Array Series

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