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CDSOT23-0502B PDF预览

CDSOT23-0502B

更新时间: 2024-12-01 12:42:59
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器瞬态抑制二极管电视光电二极管局域网
页数 文件大小 规格书
4页 237K
描述
CDSOT23-0502B - Surface Mount TVS Diode

CDSOT23-0502B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:14 weeks
风险等级:2.29最小击穿电压:6 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDSOT23-0502B 数据手册

 浏览型号CDSOT23-0502B的Datasheet PDF文件第2页浏览型号CDSOT23-0502B的Datasheet PDF文件第3页浏览型号CDSOT23-0502B的Datasheet PDF文件第4页 
Features  
Applications  
Lead free as standard  
RoHS compliant*  
Low clamping voltage  
Bidirectional ESD protection  
Protects 2 lines  
Computer interface protection  
Microprocessor protection  
Power lines on PCB protection  
Control signal lines protection  
Latchup protection  
CDSOT23-0502B - Surface Mount TVS Diode  
General Information  
The CDSOT23-0502B bidirectional device provides ESD, EFT and Surge protection  
for high speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
61000-4-5 (Surge) requirements. The Transient Voltage Suppressor array offers a  
Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V.  
3
The SOT23-3 packaged device will mount directly onto the industry standard SOT23-3  
footprint. Bourns® Chip Diodes are easy to handle with standard pick and place  
equipment and their flat configuration minimizes roll away.  
2
1
Electrical & Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Current (tp = 8/20µs)  
IPPM  
8.5  
A
ESD per IEC 61000-4-2 (Air)  
ESD per IEC 61000-4-2 (Contact)  
22  
15  
VESD IO  
kV  
Operating Temperature  
TOPR  
TSTG  
VBR  
VM  
-55 to +125  
ºC  
ºC  
V
Storage Temperature  
-55 to +150  
Minimum Reverse Breakdown Voltage @ 1mA  
Reverse Standoff Voltage  
6.0  
5
V
Maximum Leakage Current @ VWM  
Maximum Clamping Voltage 1 @ IPP=5 A contact  
IL  
2.5  
8
µA  
V
VCL1  
VCL2  
CN  
2
Maximum Clamping Voltage @ IPP=7 A contact  
9
V
Max Channel Input Capacitance @ 0 V, 1 MHz  
15  
pF  
Note: Test between Pins 1 to 3, and Pins 2 to 3.  
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications  

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