Datasheet > CDBD835

CDBD835

更新时间： 2024-11-24 22:40:11

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
2页	96K
描述
SMD Schottky Barrier Rectifier

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中文翻译

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数据手册

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CDBD835 数据手册

SSMMDD SScchhoottttkky Barrier Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

CDBD835L

Reverse Voltage: 35 Volts

Forward Current: 8.0 Amp

Features

TO-252AA (D-PAK)

DIM

Min.

Max.

Lead formed for surface mount

Easy pick and place

5.40

6.30

2.20

5.20

8.00

6.60

2.40

0.90

0.45

0.90

0.70

0.50

0.60

2.70

5.00

4.80

5.60

6.70

2.40

5.50

10.00

7.00

3.00

1.50

0.55

0.60

1.50

0.90

0.70

0.90

3.10

5.40

5.20

2.30

1.40

1.20

Plastic package has Underwriters Lab.

flammability classification 94V-0

Low Switching Noise

Low forward voltage drop

Mechanical data

Case: TO-252AA molded plastic

Terminals: solderable per MIL-STD-750,

method 2026

Mounting position: Any

Approx. Weight: 0.295 gram

1.20

0.80

Unit: Millmeters

Maximum Ratings and Electrical Characterics

Parameter

Symbol

CDBD835

Unit

Max.Repetitive Peak ReverseVoltage

VRRM

Max. DC BlockingVoltage

VDC

24.5

Max. RMS Voltage

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

8.0

Average Rectifier Forward Current (Note1)

IF(AV)

Peak Repetitive FowardCurrent (at RatedVR,

Square Wave, 20KHz, Tc=80 C)

IFRM

V F

0.5

Max. Instantaneous ForwardCurrent at 8.0A (Note 2)

Max. DC ReverseCurrent at RatedDC Blocking

Voltage Ta=25

I R

1.4

Ta=100 C

Max. Thermal Resistance(Note 3)

Operating Junction temperature

Storage Temperature

C/W

6.0

- 6 5 t o + 1 2 5

T j

TSTG

- 6 5 t o + 1 5 0

Note 1. Total deviceRated Vpat Tc=100 C

2. Pulse width= 300uS, dutycycle less than2%.

3. Thermal resistancefrom junction toambient and junctionto case mountedon minimum padsize recommended

Page 1

MDS0211012A

中文翻译

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