Datasheet > CDBDSC5650-G

CDBDSC5650-G

更新时间： 2024-11-26 01:25:51

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	91K
描述
Silicon Carbide Power Schottky Diode

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中文翻译

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技术参数
数据手册

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CDBDSC5650-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	2.22
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CDBDSC5650-G 数据手册

Silicon Carbide Power Schottky Diode

CDBDSC5650-G

Reverse Voltage: 650 V

Forward Current: 5 A

RoHS Device

D-PAK(TO-252)

Features

0.264(6.70)

0.256(6.50)

- Rated to 650V at 5 Amps

- Short recovery time

0.091(2.32)

0.089(2.28)

0.215(5.46)

0.201(5.10)

0.023(0.58)

0.018(0.46)

- High speed switching possible

- High frequency operation.

- High temperature operation.

- Temperature independent switching behaviour.

- Positive temperature coefficient on VF

0.012(0.30)

Max.

0.051(1.30)

0.043(1.10)

0.114(2.90)

0.100(2.55)

0.090(2.29)

0.035(0.89)

Circuit Diagram

0.034(0.86)

0.026(0.66)

0.093(2.37)

0.085(2.16)

0.023(0.58)

0.016(0.43)

C(3)

Dimensions in inches and (millimeters)

C(1)

A(2)

Maximum Ratings (at TA=25°C, unless otherwise noted)

Symbol

Value

650

Parameter

Repetitive peak reverse voltage

Surge peak reverse voltage

DC bolcking voltage

Conditions

Unit

VRRM

VRSM

VDC

650

TC = 25°C

TC = 135°C

TC = 160°C

21.5

Continuous forward current

Tc = 25°C, tp = 10ms

Repetitive peak forward surge cruuent

Non-repetitive peak forward surge current

IFRM

IFSM

Half sine wave, D = 0.3

Tc = 25°C, tp = 10ms

Half sine wave

85.8

37.2

TC = 25°C

Power dissipation

PTOT

TC = 110°C

Typical thermal resistance

Junction to case

RθJC

1.748

°C/W

°C

Operating junction temperature range

Storage temperature range

-55 ~ +175

TSTG

°C

Company reserves the right to improve product design , functions and reliability without notice.

REV:

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QW-BSCXX

Comchip Technology CO., LTD.

中文翻译

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