Datasheet > CDBDSC3650-G

CDBDSC3650-G

更新时间： 2024-11-26 01:25:51

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
2页	91K
描述
Silicon Carbide Power Schottky Diode

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中文翻译

获取价格

数据手册

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CDBDSC3650-G 数据手册

Silicon Carbide Power Schottky Diode

CDBDSC3650-G

Reverse Voltage: 650 V

Forward Current: 3 A

RoHS Device

D-PAK(TO-252)

Features

- Rated to 650V at 3 Amps

0.264(6.70)

0.256(6.50)

0.091(2.32)

0.089(2.28)

0.215(5.46)

0.201(5.10)

- Short recovery time

0.023(0.58)

0.018(0.46)

- High speed switching possible

- High frequency operation.

- High temperature operation.

- Temperature independent switching behaviour.

- Positive temperature coefficient on VF

0.012(0.30)

Max.

0.051(1.30)

0.043(1.10)

0.114(2.90)

0.100(2.55)

0.090(2.29)

0.035(0.89)

0.034(0.86)

0.026(0.66)

Circuit Diagram

0.093(2.37)

0.085(2.16)

0.023(0.58)

0.016(0.43)

C(3)

Dimensions in inches and (millimeters)

C(1)

A(2)

Maximum Ratings (at TA=25°C, unless otherwise noted)

Symbol

Value

650

Parameter

Repetitive peak reverse voltage

Surge peak reverse voltage

DC bolcking voltage

Conditions

Unit

VRRM

VRSM

VDC

650

TC = 25°C

TC = 135°C

TC = 155°C

Continuous forward current

Tc = 25°C, tp = 10ms

Repetitive peak forward surge cruuent

Non-repetitive peak forward surge current

IFRM

IFSM

Half sine wave, D = 0.3

Tc = 25°C, tp = 10ms

Half sine wave

53.2

TC = 25°C

Power dissipation

PTOT

TC = 110°C

Typical thermal resistance

Junction to case

RθJC

2.82

°C/W

°C

Operating junction temperature range

Storage temperature range

-55 ~ +175

TSTG

°C

Company reserves the right to improve product design , functions and reliability without notice.

REV:

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QW-BSCXX

Comchip Technology CO., LTD.

中文翻译

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