Datasheet > CD4531

CD4531

更新时间： 2024-11-03 21:55:55

品牌	Logo	应用领域
其他 - ETC		二极管开关
页数	文件大小	规格书
2页	147K
描述
HIGH SPEED SILICON SWITCHING DIODE

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中文翻译

获取价格

数据手册

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CD4531 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

HIGH SPEED SILICON SWITCHING DIODE

CD4531

DO- 35

Glass Axial Package

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

Average Rectified Forward Current

Forward Current (DC)

SYMBOL

V_RRM

V_R

VALUE

UNIT

I_F(av)

I_F

150

ºC

200

I_FRM

Repetitive Peak Forward Current

Non Repetitive Peak Forward Current t<1 µs

t<1 s

450

I_FSM

2000

500

I_FSM

P_tot

500

- 65 to +200

Power Dissipation up to Tamb=25 ºC

Operating & Storage Junction Temperature

Range

T_j, T_stg

Thermal Resistance

R_th(j-a)

R_th(j-t)*

Junction to Ambient Lead Length 5mm

Junction to Tie-Point Lead Length 5mm

350

120

K/W

*Device mounted on a printed circuit-board without metallization pad.

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

Forward Voltage

Reverse Current

SYMBOL

TEST CONDITION

I_F=10mA

MIN

MAX

1.0

UNIT

µA

V_F

I_R

V_R=20V

V_R=20V, T_j=150º C

V_R=75V

I_R=100µA

5.0

V_BR

Reverse Breakdown Voltage

DYNAMIC CHARACTERISTICS

Diode Capacitance

C_d

V_fr

t_rr

V_R=0V, f=1MHz

4.0

3.0

4.0

I_F=100mA, t_r< 30ns

I_F=10mA, to I_R=60mA

R_L=100 Ω

Forward Recovery Voltage

Reverse Recovery Time

Measured @ I_R=1mA

Continental Device India Limited

Data Sheet

Page 1 of 3

中文翻译

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