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CD4070BMS PDF预览

CD4070BMS

更新时间: 2024-01-26 23:33:50
品牌 Logo 应用领域
英特矽尔 - INTERSIL 逻辑集成电路石英晶振光电二极管
页数 文件大小 规格书
8页 75K
描述
CMOS Quad Exclusive OR and Exclusive NOR Gates

CD4070BMS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.32系列:4000/14000/40000
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm负载电容(CL):50 pF
逻辑集成电路类型:XOR GATE最大I(ol):0.0068 A
湿度敏感等级:1功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):260电源:5/15 V
最大电源电流(ICC):0.03 mAProp。Delay @ Nom-Sup:280 ns
传播延迟(tpd):280 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.2 mm
子类别:Gates最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mmBase Number Matches:1

CD4070BMS 数据手册

 浏览型号CD4070BMS的Datasheet PDF文件第2页浏览型号CD4070BMS的Datasheet PDF文件第3页浏览型号CD4070BMS的Datasheet PDF文件第4页浏览型号CD4070BMS的Datasheet PDF文件第6页浏览型号CD4070BMS的Datasheet PDF文件第7页浏览型号CD4070BMS的Datasheet PDF文件第8页 
Specifications CD4070BMS, CD4077BMS  
TABLE 6. APPLICABLE SUBGROUPS (Continued)  
MIL-STD-883  
CONFORMANCE GROUP  
PDA (Note 1)  
METHOD  
100% 5004  
100% 5004  
Sample 5005  
Sample 5005  
Sample 5005  
Sample 5005  
GROUP A SUBGROUPS  
READ AND RECORD  
1, 7, 9, Deltas  
Final Test  
2, 3, 8A, 8B, 10, 11  
1, 2, 3, 7, 8A, 8B, 9, 10, 11  
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas  
1, 7, 9  
Group A  
Group B  
Subgroup B-5  
Subgroup B-6  
Subgroups 1, 2, 3, 9, 10, 11  
Subgroups 1, 2 3  
Group D  
1, 2, 3, 8A, 8B, 9  
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.  
TABLE 7. TOTAL DOSE IRRADIATION  
TEST  
READ AND RECORD  
MIL-STD-883  
METHOD  
CONFORMANCE GROUPS  
PRE-IRRAD  
POST-IRRAD  
PRE-IRRAD  
POST-IRRAD  
Group E Subgroup 2  
5005  
1, 7, 9  
Table 4  
1, 9  
Table 4  
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS  
OSCILLATOR  
FUNCTION  
OPEN  
GROUND  
VDD  
9V ± -0.5V  
50kHz  
25kHz  
Static Burn-In 1  
Note 1  
3, 4, 10, 11  
1, 2, 5-9, 12, 13  
14  
Static Burn-In 2  
Note 1  
3, 4, 10, 11  
-
7
7
7
1, 2, 5, 6, 8,  
9, 12-14  
Dynamic Burn-  
In Note 1  
14  
3, 4, 10, 11  
1, 5, 8, 12  
2, 6, 9, 13  
Irradiation  
Note 2  
3, 4, 10, 11  
1, 2, 5, 6, 8,  
9, 12-14  
NOTE:  
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V  
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,  
VDD = 10V ± 0.5V  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
Taiwan Limited  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (321) 724-7000  
FAX: (321) 724-7240  
459  

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