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CD214B-B160 PDF预览

CD214B-B160

更新时间: 2024-11-11 04:52:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 整流二极管
页数 文件大小 规格书
4页 341K
描述
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode

CD214B-B160 数据手册

 浏览型号CD214B-B160的Datasheet PDF文件第2页浏览型号CD214B-B160的Datasheet PDF文件第3页浏览型号CD214B-B160的Datasheet PDF文件第4页 
Features  
Lead free versions available  
RoHS compliant (lead free version)*  
Reverse voltage from 20 to 60 V  
Forward current of 1 A  
High current capability  
For use in low voltage high frequency  
inverters, free wheeling and polarity  
protection applications  
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly  
smaller electronic components.  
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB  
real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with  
a choice of repetitive peak reverse voltage of 20 V up to 60 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
B140  
Parameter  
Symbol  
Unit  
V
B120  
B130  
B150  
B160  
Forward Voltage (Max.)  
V
F
0.5  
0.5  
0.5  
110  
0.5  
0.7  
0.7  
(I = 2 A)  
f
Typical Junction  
Capacitance*  
C
T
pF  
mA  
Reverse Current (Max.)  
at Rated V )  
I
R
R
*
Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
Absolute Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
B140  
Parameter  
Symbol  
Unit  
B120  
B130  
B150  
B160  
Repetitive Peak  
Reverse Voltage  
V
RRM  
20  
30  
40  
50  
60  
V
Reverse Voltage  
V
20  
14  
30  
21  
40  
28  
1
50  
35  
60  
42  
V
V
A
R
Maximum RMS Voltage  
Avg. Forward Current  
V
RMS  
I
O
Forward Current,  
Surge Peak  
(60 Hz, 1 cycle)  
I
30  
A
surge  
Typical Thermal  
Resistance**  
R
ΘJL  
20  
°C/W  
Storage Temperature  
Junction Temperature  
T
-55 to +150  
-55 to +125  
°C  
°C  
STG  
T
J
** Thermal resistance junction to lead.  
Reliable Electronic Solutions  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

CD214B-B160 替代型号

型号 品牌 替代类型 描述 数据表
CD214B-B160LF BOURNS

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