生命周期: | Transferred | 包装说明: | DIE-1 |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
Is Samacsys: | N | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | S-XUUC-N1 | 元件数量: | 1 |
端子数量: | 1 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 1 A |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | UNCASED CHIP | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 30 V | 表面贴装: | YES |
技术: | SCHOTTKY | 端子形式: | NO LEAD |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CD1A30E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DIE-1 | |
CD1A40 | CDI-DIODE |
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1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | |
CD1A40E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DIE-1 | |
CD1A50 | CDI-DIODE |
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1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | |
CD1A50E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DIE-1 | |
CD1A60 | CDI-DIODE |
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1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | |
CD1A60E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DIE-1 | |
CD1A80 | CDI-DIODE |
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1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | |
CD1A80E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DIE-1 | |
CD1AM | CRYSTEKMICROWAVE |
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Quartz Crystal Leaded HC49 Crystal |