CD0805-xxxx products
are currently available,
although not recom-
Features
Applications
■ Cellular phones
■ PDAs
■ Desktop PCs and
notebooks
■ Lead free as standard
■ RoHS compliant*
■ Leadless
mended for new designs. Use
CD1005-xxxx products as an
alternative.
6
■ High speed
■ Digital cameras
■ MP3 players
Switching Chip Diode Series - 0805 / 1206
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0805 and 1206 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)
A
Parameter
Symbol
CDxxxx-S0180
CDxxxx-S01575
CDxxxx-S0180R
Unit
1.00
(I = 100 mA)
1.00
(I = 50 mA)
1.00
(I = 100 mA)
Forward Voltage (Max.)
V
F
V
f
f
f
3
Capacitance Between Terminals (Max.)
Reverse Recovery Time (Max.)
Reverse Current (Max.)
C
T
pF
nS
µA
(f = 100 MHz, V = 1 V DC)
r
4
t
rr
(V = 6V, I = 10 mA, R = 50 Ω)
r
f
L
0.1
(V = 80 V)
2.5
(V = 75 V)
0.05
(V = 75 V)
I
R
r
r
r
Absolute Ratings (@ T = 25 °C Unless Otherwise Noted)
A
Parameter
Symbol
CDxxxx-S0180
CDxxxx-S01575
CDxxxx-S0180R
Unit
V
Repetitive Peak Reverse Voltage
Reverse Voltage
V
90
80
100
75
90
80
RRM
V
V
R
Average Forward Current
Forward Current, Surge Peak
Power Dissipation
I
100
1*
150
100
1*
mA
A
o
I
4**
surge
PD
300
350
300
mW
°C
°C
Storage Temperature
Junction Temperature
T
-55 to +125
-55 to +125
STG
T
J
*
Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
How To Order
** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
CD 0805 - S 01 80 R
Common Code
Chip Diode
Package
• 0805
• 1206
Model
S = High Speed Switching
Average Forward Current (I ) Code
o
01 = 100 mA
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (V ) Code
R
80 = 80 V
75 = 75 V
Reverse Current Suffix
R = Low Leakage I (CDxxxx-S0180R)
R
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.