Datasheet > CD1207

CD1207

更新时间： 2024-11-10 08:58:43

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
4页	108K
描述
Transistor

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中文翻译

获取价格

数据手册

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CD1207 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CD1207

TO-92L

Plastic Package

High Cureent Switching Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )

VALUE

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

I_CP

Peak Collector Current

Collector Power Dissipation

Junction Temperature

P_C

ºC

T_j

150

T_stg

- 55 to +150

Storage Temperature

ºC

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

V_CBO

V_CEO

V_EBO

I_CBO

I_C=10mA, I_E=0

I_C=1mA, I_B=0

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

I_E=10mA, I_C=0

V_CB=50V, I_E=0

V_EB=4V, I_C= 0

I_C=100mA, V_CE=2V

I_C=1.5A, V_CE=2V

100

560

I_EBO

*h_FE

100

h_FE

V_{CE (sat)}

I_C=1A, I_B=50mA

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

0.4

1.2

V_{BE (sat)}

DYNAMIC CHARACTERISTICS

Transition Frequency

f_T

V_CE=10V, I_C=50mA

150

MHz

C_ob

V_CB=10V,I_E=0, f=1MHz

Output Capacitance

CLASSIFICATION

*h_FE

200 - 400

280 - 560

100 - 200

140 - 280

CD1207Rev140205E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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