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CD1206-S0180 PDF预览

CD1206-S0180

更新时间: 2024-11-29 21:15:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
4页 374K
描述
Rectifier Diode, 1 Element, 0.1A, 90V V(RRM), Silicon, ROHS COMPLIANT, LEADLESS, PLASTIC PACKAGE-2

CD1206-S0180 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, LEADLESS, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.81
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e4元件数量:1
端子数量:2最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.3 W认证状态:Not Qualified
最大重复峰值反向电压:90 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:GOLD
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CD1206-S0180 数据手册

 浏览型号CD1206-S0180的Datasheet PDF文件第2页浏览型号CD1206-S0180的Datasheet PDF文件第3页浏览型号CD1206-S0180的Datasheet PDF文件第4页 
Features  
Lead free device (RoHS compliant*)  
Low profile  
Applications  
High frequency switching power supplies  
Inverters  
6
High current capability  
UL 94V-0 classification  
Free wheeling  
Polarity protection  
CD1206-B220~B2100 – Surface Mount Schottky Rectifier Diode  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package  
1206 size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier  
Diodes offer a forward current of 2 A with a repetitive peak reverse voltage of 20 V up to 100 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD1206-  
Parameter  
Symbol  
Unit  
B220  
B240  
B260  
B2100  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
20  
40  
60  
100  
V
RRM  
Maximum RMS Voltage  
14  
20  
28  
40  
42  
60  
70  
V
V
RMS  
Maximum DC Blocking Voltage  
V
100  
DC  
Maximum Average Forward  
Rectified Current1  
I
2
A
mA  
mA  
V
(AV)  
DC Reverse Current @ Rated DC  
I
0.5  
R
R
Blocking Voltage (@T = 25 °C)  
J
DC Reverse Current @ Rated DC  
I
20  
10  
Blocking Voltage (@T = 100 °C)  
J
Maximum Instantaneous  
Forward Voltage @ 2 A2  
V
F
0.5  
0.7  
0.85  
R
R
75  
17  
θJA  
θJL  
Typical Thermal Resistance3  
°C/W  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load (JEDEC Method)  
I
40  
A
FSM  
Notes:  
1 See Forward Derating Curve.  
2 Pulse test width PW = 300 µsec, 1 % duty cycle.  
3 Mounted on P.C. board with 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CD1206-B220~B2100  
Unit  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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