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CAT22C10JI-30-TE13 PDF预览

CAT22C10JI-30-TE13

更新时间： 2024-10-27 02:52:07
品牌 Logo 应用领域
CATALYST /
页数 文件大小 规格书
10页 505K
描述
256-Bit Nonvolatile CMOS Static RAM

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CAT22C10JI-30-TE13 数据手册

 浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第2页浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第3页浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第4页浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第5页浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第6页浏览型号CAT22C10JI-30-TE13的Datasheet PDF文件第7页 
E
CAT22C10  
256-Bit Nonvolatile CMOS Static RAM  
TM  
FEATURES  
■ Single 5V Supply  
■ Low CMOS Power Consumption:  
–Active: 40mA Max.  
■ Fast RAM Access Times:  
–Standby: 30 µA Max.  
–200ns  
–300ns  
■ JEDEC Standard Pinouts:  
–18-pin DIP  
■ Infinite EEPROM to RAM Recall  
■ CMOS and TTL Compatible I/O  
■ Power Up/Down Protection  
–16-pin SOIC  
■ 10 Year Data Retention  
■ Commercial, Industrial and Automotive  
■ 100,000 Program/Erase Cycles (E2PROM)  
Temperature Ranges  
■ "Green" Package Options Available  
DESCRIPTION  
TheCAT22C10NVRAMisa256-bitnonvolatilememory  
organized as 64 words x 4 bits. The high speed Static  
RAM array is bit for bit backed up by a nonvolatile  
EEPROM array which allows for easy transfer of data  
from RAM array to EEPROM (STORE) and from  
EEPROM to RAM (RECALL). STORE operations are  
completed in 10ms max. and RECALL operations typi-  
cally within 1.5µs. The CAT22C10 features unlimited  
RAM write operations either through external RAM  
writes or internal recalls from EEPROM. Internal false  
store protection circuitry prohibits STORE operations  
when VCC is less than 3.0V.  
The CAT22C10 is manufactured using Catalyst’s ad-  
vanced CMOS floating gate technology. It is designed  
to endure 100,000 program/erase cycles (EEPROM)  
and has a data retention of 10 years. The device is  
availableinJEDECapproved18-pinplasticDIPand16-  
pin SOIC packages.  
PIN FUNCTIONS  
PIN CONFIGURATION  
DIP Package (P, L)  
SOIC Package (J, W)  
Pin Name  
A0–A5  
I/O0–I/O3  
WE  
Function  
Address  
Data In/Out  
Write Enable  
Chip Select  
Recall  
A
A
A
A
1
2
3
4
5
6
1 6  
1 5  
1 4  
13  
12  
11  
10  
9
V
cc  
V
4
3
2
1
1 8  
NC  
cc  
1
2
3
4
5
6
7
8
A
5
A
4
1 7  
1 6  
1 5  
1 4  
13  
NC  
A
I/O  
I/O  
I/O  
I/O  
4
3
2
1
A
3
5
A
2
I/O  
3
CS  
A
A
I/O  
I/O  
I/O  
0
1
2
1
0
RECALL  
STORE  
VCC  
CS  
A
0
CS  
V
7
8
12  
WE  
RECALL  
ss  
STORE  
Store  
V
11  
WE  
ss  
+5V  
STORE  
9
10  
RECALL  
VSS  
Ground  
NC  
No Connect  
© 2004 by Catalyst Semiconductor, Inc., Patent Pending  
Characteristics subject to change without notice  
Doc. No. 1082, Rev. O  
1234567...10

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