Datasheet > CAB400M12XM3

CAB400M12XM3

更新时间： 2024-10-30 01:25:51

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	801K
描述
1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CAB400M12XM3 数据手册

V_DS

I_DS

1200 V

400 A

CAB400M12XM3

1200 V, 400 A All-Silicon Carbide

Switching-Loss Optimized, Half-Bridge Module

Technical Features

Package 80 x 53 x 19 mm

•

High Power Density Footprint

High Junction Temperature (175 °C) Operation

Low Inductance (6.7 nH) Design

Implements Third Generation SiC MOSFET

Technology Optimized for Low Switching Loss

Silicon Nitride Insulator and Copper Baseplate

•

Applications

•

Motor & Traction Drives

Vehicle Fast Chargers

Uninterruptable Power Supplies

Smart-Grid / Grid-Tied Distributed Generation

System Benefits

•

Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

•

Isolated integrated temperature sensing enables high-level temperature protection.

Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Key Parameters (T_C= 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

1200

+19

Unit

Test Conditions

Note

V_{DS max}Drain-Source Voltage

V_{GS max}Gate-Source Voltage, Maximum Value

Note 1

-4

AC frequency ≥ 1 Hz

Static

Gate-Source Voltage, Recommended

Operating Value

V_{GS op}

+15

395

298

395

220

V_GS= 15 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C Fig. 20

I_DS

I_SD

DC Continuous Drain Current

Note 2

V_GS= 15 V, T_C= 90 ˚C, T_VJ≤ 175 ˚C

V_GS= 15 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C

V_GS= - 4 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C

DC Source-Drain Current

I_{SD BD}DC Source-Drain Current (Body Diode)

I_{DS pulsed}Maximum Pulsed Drain-Source Current

I_{SD pulsed}Maximum Pulsed Source-Drain Current

800

t_{P max}limited by T_{j max}

V_GS= 15 V, T_C= 25 ˚C

Maximum Virtual Junction

T_{VJ op}Temperature under Switching

Conditions

-40

175

°C

Note 1 If MOSFET body diode is not used, V_{GS max}= -8/+19 V

Note 2 Assumes R_{TH JC}= 0.15 °C/W and R_{DS on}= 6.4 mΩ. Calculate P_D= (T_VJ– T_C) / R_{TH JC}. Calculate I_{D max}= √(P_D/ R_{DS on}

)

Rev. -, 2019-10-31

CAB400M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与CAB400M12XM3相关器件

型号	品牌	获取价格	描述	数据表
CAB450M12XM3	CREE	获取价格	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module
CAB4A	TI	获取价格	CAB4A - DDR4 Register 32-Bit 1:2 Command/Address/Control Buffer and 1:4 Differential Clock
CAB4AZNRR	TI	获取价格	CAB4A - DDR4 Register 32-Bit 1:2 Command/Address/Control Buffer and 1:4 Differential Clock
CAB-5.0-1.0	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.0-1.5	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.0-10	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.5-6.8	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.7-0.10	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.8-2.2	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes
CAB-5.9-5.6	NUVOTEM TALEMA	获取价格	Common Mode Toroidal Chokes

与CAB400M12XM3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

17
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

41
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

49

产品中心

服务支持

精选活动

关于我们

帮助中心

CAB400M12XM3

CAB400M12XM3 数据手册

与CAB400M12XM3相关器件

与CAB400M12XM3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CAB400M12XM3

CAB400M12XM3 数据手册

与CAB400M12XM3相关器件

与CAB400M12XM3相关文章

您还可以找

您在本页遇到什么问题？