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CA3141

更新时间: 2024-11-09 04:35:39
品牌 Logo 应用领域
哈里斯 - HARRIS 二极管军事高压
页数 文件大小 规格书
4页 33K
描述
High-Voltage Diode Array For Commercial, Industrial and Military Applications

CA3141 数据手册

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Semiconductor  
CA3141  
High-Voltage Diode Array For Commercial,  
Industrial and Military Applications  
January 1999  
Features  
Description  
• Matched Monolithic Construction  
The CA3141E High Voltage Diode Array Consists of ten gen-  
eral purpose high reverse breakdown diodes. Six diodes are  
internally connected to form three common cathode diode  
pairs, and the remaining four diodes are internally connected  
to form two common anode diode pairs. Integrated circuit  
construction assures excellent static and dynamic matching  
of the diodes, making the CA3141 extremely useful for a  
wide variety of applications in communications and switching  
systems.  
- V Match (Each Diode Pair). . . . 0.55mV At I = 1mA  
F
F
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V = 2V  
R
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)  
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)  
Applications  
• Balanced Modulators or Demodulators  
• Analog Switches  
• High-Voltage Diode Gates  
• Current Ratio Detectors  
Part Number Information  
TEMP.  
PKG.  
NO.  
o
PART NUMBER RANGE ( C)  
PACKAGE  
CA3141E  
-55 to 125 16 Ld PDIP  
E16.3  
Pinout  
CA3141  
(PDIP)  
TOP VIEW  
D
D
1
10  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
D
D
2
9
D
D
3
7
D
D
4
8
D
D
5
6
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
File Number 906.4  
Copyright © Harris Corporation 1999  
1

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