Datasheet > CA3141E

CA3141E

更新时间： 2024-11-25 22:50:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		二极管测试光电二极管军事高压
页数	文件大小	规格书
4页	43K
描述
High-Voltage Diode Array For Commercial, Industrial and Military Applications

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CA3141E 数据手册

Semiconductor

CA3141

High-Voltage Diode Array For Commercial,

Industrial and Military Applications

January 1999

Features

Description

• Matched Monolithic Construction

The CA3141E High Voltage Diode Array Consists of ten gen-

eral purpose high reverse breakdown diodes. Six diodes are

internally connected to form three common cathode diode

pairs, and the remaining four diodes are internally connected

to form two common anode diode pairs. Integrated circuit

construction assures excellent static and dynamic matching

of the diodes, making the CA3141 extremely useful for a

wide variety of applications in communications and switching

systems.

- V Match (Each Diode Pair). . . . 0.55mV At I = 1mA

• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V = 2V

• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)

• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications

• Balanced Modulators or Demodulators

• Analog Switches

• High-Voltage Diode Gates

• Current Ratio Detectors

Part Number Information

TEMP.

PKG.

NO.

PART NUMBER RANGE ( C)

PACKAGE

CA3141E

-55 to 125 16 Ld PDIP

E16.3

Pinout

CA3141

(PDIP)

TOP VIEW

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

File Number 906.4

12 3 4

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