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CA3146E

更新时间： 2024-01-21 03:55:31
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
1页 31K
描述
5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-001AA, PLASTIC, DIP-14

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CA3146E 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：PLASTIC, DIP-14
针数：14Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.66
Is Samacsys：N其他特性：LOW NOISE
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：30 V
配置：COMPLEX最高频带：VERY HIGH FREQUENCY BAND
JEDEC-95代码：MS-001AAJESD-30 代码：R-PDIP-T14
JESD-609代码：e0元件数量：5
端子数量：14封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：500 MHzBase Number Matches：1

CA3146E 数据手册

  
Intersil  
Drivers, Buffers, Op-Amps and Arrays  
Full Bridge MOSFET Drivers  
Peak Output  
Current  
Each Drive  
Supply Voltage  
Bias/Bus  
(V)  
No Load Maint.  
Supply Current  
(mA)  
Temperature  
Range  
(¡C)  
Mfr.Õs  
Type  
Package  
Type  
Description  
FET Driver with Comparator, Under Voltage, for Class D Amps,Voice Coils, and Motor Control  
HIP4080AIP  
HIP4081AIP  
HIP4082IP  
2.50 A  
2.50 A  
1.25 A  
Bias: 9.5 to 16.0  
Bus: 1.0 to 80.0  
18.5  
16.5  
6.5  
Ð40 to +85  
Ð40 to +85  
Ð40 to +85  
20 Lead PDI  
20 Lead PDI  
16 Lead PDI  
FET Driver with Under Voltage, High Performance for DC-DC Converters, UPS and Motor Control  
FET Driver with Under Voltage Independent FET Control  
Bias: 9.5 to 16.0  
Bus: 1.0 to 80.0  
Bias: 9.5 to 16.0  
Bus: 1.0 to 80.0  
High Performance Buffers  
Single  
Mfr.Õs  
Type  
Ð3 dB  
Bandwidth @  
Min. Acl  
Input  
Offset  
Voltage  
(mV)  
Slew  
Rate  
(V/µs)  
Settling  
Time  
(ns to %)  
Bias  
Current  
(µA)  
Output  
Current  
(mA/Amp)  
Supply  
Range  
Supply  
Current  
(mA/Amp)  
Description  
(±VDC  
)
PDIP  
SOIC  
(MHz)  
HFA1112IP  
HA3-5033-5  
HA3-5002-5  
Ñ
Ñ
850  
MHz  
Programmable  
Gain  
1100  
1300  
(+2,  
50-0.10  
50-0.10  
±1)850  
5
5
2050  
20.0  
2.0  
11-0.10  
100  
220  
8
25.0  
21.0  
8.3  
60  
4.5  
to  
5.5  
21.0  
250 MHz Video Buffer  
110 MHz High Output Current  
250  
110  
5.0 to 16.0  
6.0 to 16.0  
HA9P5002-5  
General Purpose Op-Amps  
Single  
Mfr.Õs  
Type  
Maximum  
Supply  
Voltage  
(±V)  
Minimum  
Stable  
Gain  
Slew  
Rate  
(V/µs)  
Offset  
Voltage  
(mV)  
Bias  
Current  
(µA)  
Supply  
Current  
(mA/Amp)  
GBWP  
(MHz)  
No. of  
Leads  
Description  
DIP  
CA3130AE  
CA3130E  
BiMOS Op-Amp with MOSFET Input/CMOS Output  
BiMOS Op-Amp with MOSFET Input/CMOS Output  
1
1
15.0  
15.0  
30.0  
30.0  
2.0  
8.0  
5.000 pA  
5.000 pA  
8.0  
8.0  
2.00  
2.00  
8
8
CA3140AE  
CA3140E  
BiMOS Op-Amp with MOSFET Input/Bipolar Output  
BiMOS Op-Amp with MOSFET Input/Bipolar Output  
1
1
4.5  
4.5  
9.0  
9.0  
2.0  
5.0  
10.000 pA  
10.000 pA  
18.0  
18.0  
4.00  
4.00  
8
8
HA7-2645-5  
CA3160E  
High Voltage Op-Amp  
BiMOS Op-Amp with MOSFET Input/CMOS Output  
1
1
4.0  
4.0  
5.0  
10.0  
2.0  
6.0  
0.012  
5.000 pA  
50.0  
8.0  
3.20  
2.00  
8
8
CA3080E  
CA741E  
Operational  
High Gain  
Transconductance  
Amplifier  
(OTA)1  
2.0  
0.080  
75.0  
0.4  
2.000  
18.0  
1.00  
8
1
3
1.0  
0.5  
1.0  
5.0  
22.0  
20.0  
1.70  
4.00  
8
8
HA3-2525-5  
Uncompensated High Slew Rate Op-Amp  
20.0  
120.0  
0.125  
Dual  
CA3240AE  
CA3240E  
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output  
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output  
1
1
4.5  
4.5  
9.0  
9.0  
2.0  
5.0  
10.000 pA  
10.000 pA  
18.0  
18.0  
4.00  
4.00  
8
8
CA1458E  
High Gain  
1
1.0  
0.5  
1.0  
0.080  
22.0  
1.70  
8
13  
Transistor/Diode Arrays  
Transistor Arrays  
V
Min.  
(BR)CEO  
V(BR)CBO  
Min.  
(V)  
Mfr.Õs  
Type  
h
Min.  
FE  
I
C
Max.  
Package  
Type  
Description  
(mA)  
(V)  
CA3046  
CA3081  
3 Transistors Plus a Differential Pair, fT > 300 MHz, 2 Matched Pairs ±5 mV  
7 Common Emitter General Purpose NPN High Current Transistors  
15  
16  
20  
20  
40  
40  
50  
100  
14 Lead PDIP  
16 Lead PDIP  
CA3082  
CA3083  
7 Common Collector General Purpose NPN High Current Transistors  
5 Independent NPN Transistors. Q1 and Q2 Matched; II0 (at 1 mA) 2.5 µA Max.  
16  
15  
20  
20  
40  
40  
100  
100  
16 Lead PDIP  
16 Lead PDIP  
CA3086  
CA3146E  
3 Isolated NPN Transistors Plus a Differential Pair. fT>500 MHz Typ. from DC to 120 MHz  
3 Transistors Plus a Differential Pair, fT > 500 MHz Typ. Operation from DC to 120 MHz  
15  
30  
20  
40  
40  
40  
50  
75  
14 Lead PDIP  
14 Lead PDIP  
CA3183AE  
CA3096E  
5 High Current/High Voltage NPN Transistors. Q1 and Q2 Matched at 1 mA  
40  
50  
40  
75  
3
16 Lead PDIP  
5
Independent  
Transistors,  
NPN  
and  
2
CA3096AE  
CA3096CE  
5
5
Independent  
Independent  
Transistors,  
Transistors,  
3
3
NPN  
NPN  
and  
and  
2
2
HFA3127B  
5
Independent  
8
GHz  
NPN  
Transistors,  
NF  
=
3.5  
dB  
Diode Array  
V
Min.  
(V)  
(BR)R  
I
R
C
Typ.  
(pF)  
D
V
Max.  
(mV)  
F1-VF2  
Mfr.Õs  
Type  
Package  
Type  
Description  
Individual  
Max.  
(µA)  
CA3039  
6
Ultra-Fast  
Low  
Capacitance  
Matched  
Diodes  
5
0.1  
0.65  
5
(IF=1  
mA)12  
Same Day Shipments For Product In Stock  
ALLIED  
c
823  
1

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