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C4532X7R1H685K PDF预览

C4532X7R1H685K

更新时间: 2024-10-29 12:53:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
23页 857K
描述
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

C4532X7R1H685K 数据手册

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Document Number: MRFE6VP61K25H  
Rev. 4, 3/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
MRFE6VP61K25HR6  
MRFE6VP61K25HSR5  
MRFE6VP61K25GSR5  
Enhancement--Mode Lateral MOSFETs  
These high ruggedness devices are designed for use in high VSWR industrial  
(including laser and plasma exciters), broadcast (analog and digital), aerospace  
and radio/land mobile applications. They are unmatched input and output  
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.  
1.8--600 MHz, 1250 W CW, 50 V  
WIDEBAND  
RF POWER LDMOS TRANSISTORS  
Typical Performance: VDD = 50 Volts, IDQ = 100 mA  
P
(W)  
f
G
(dB)  
D
(%)  
out  
ps  
Signal Type  
(MHz)  
Pulse  
1250 Peak  
230  
24.0  
74.0  
(100 sec, 20% Duty Cycle)  
CW  
1250 CW  
230  
22.9  
74.6  
Application Circuits (1) — Typical Performance  
Frequency  
(MHz)  
P
out  
(W)  
G
(dB)  
ps  
D
NI--1230--4H  
MRFE6VP61K25HR6  
Signal Type  
(%)  
81  
85  
84  
80  
78  
30  
66  
27  
40  
CW  
CW  
1300  
1300  
1250  
1100  
1250  
225  
27  
26  
81.36  
CW  
27  
87.5--108  
144--148  
170--230  
352  
CW  
24  
CW  
26  
DVB--T  
25  
NI--1230--4S  
MRFE6VP61K25HSR5  
Pulse  
(200 sec,  
1250  
21.5  
20% Duty Cycle)  
352  
500  
CW  
CW  
1150  
1000  
20.5  
18  
68  
58  
1. Contact your local Freescale sales office for additional information on specific  
circuit designs.  
Load Mismatch/Ruggedness  
NI--1230--4S GULL  
MRFE6VP61K25GSR5  
Frequency  
(MHz)  
P
(W)  
Test  
Voltage  
out  
Signal Type  
VSWR  
Result  
230  
Pulse  
>65:1 at all  
1500 Peak  
(3 dB  
50  
No Device  
Degradation  
(100 sec, 20% Phase Angles  
Duty Cycle)  
Overdrive)  
Gate A  
Gate B  
Drain A  
Drain B  
3
4
1
2
Features  
Unmatched Input and Output Allowing Wide Frequency Range Utilization  
Device can be used Single--Ended or in a Push--Pull Configuration  
Qualified Up to a Maximum of 50 VDD Operation  
Characterized from 30 V to 50 V for Extended Power Range  
Suitable for Linear Application with Appropriate Biasing  
(Top View)  
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range  
for Improved Class C Operation  
Note: The backside of the package is the  
source terminal for the transistor.  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Figure 1. Pin Connections  
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.  
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  
Freescale Semiconductor, Inc., 2010--2013. All rights reserved.  

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