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C4532X7R1H685KT PDF预览

C4532X7R1H685KT

更新时间: 2024-11-20 01:23:51
品牌 Logo 应用领域
恩智浦 - NXP 电容器
页数 文件大小 规格书
27页 1718K
描述
RF LDMOS Wideband Integrated Power Amplifiers

C4532X7R1H685KT 数据手册

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Document Number: MW7IC2220N  
Rev. 2, 5/2011  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MW7IC2220N wideband integrated circuit is designed with on--chip  
matching that makes it usable from 2000 to 2200 MHz. This multi--stage  
structure is rated for 24 to 32 Volt operation and covers all typical cellular base  
station modulation formats including TD--SCDMA.  
MW7IC2220NR1  
MW7IC2220GNR1  
MW7IC2220NBR1  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA,  
IDQ2 = 300 mA, Pout = 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,  
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%  
Probability on CCDF.  
2110--2170 MHz, 2 W Avg., 28 V  
SINGLE W--CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Power Gain — 31 dB  
Power Added Efficiency — 13%  
ACPR @ 5 MHz Offset — -- 50 dBc in 3.84 MHz Bandwidth  
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW  
Output Power  
CASE 1886--01  
TO--270 WB--16  
PLASTIC  
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 Watts  
CW Pout  
.
MW7IC2220NR1  
Typical Pout @ 1 dB Compression Point ' 20 Watts CW  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
CASE 1887--01  
TO--270 WB--16 GULL  
PLASTIC  
and Common Source S--Parameters  
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)  
Integrated Quiescent Current Temperature Compensation with  
MW7IC2220GNR1  
Enable/Disable Function (1)  
Integrated ESD Protection  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.  
CASE 1329--09  
TO--272 WB--16  
PLASTIC  
MW7IC2220NBR1  
GND  
1
2
3
4
5
16  
15  
GND  
NC  
V
DS1  
NC  
NC  
NC  
V
DS1  
RF /V  
out DS2  
6
14  
RF  
in  
RF  
RF /V  
out DS2  
in  
7
8
NC  
GS1  
GS2  
DS1  
GND  
V
V
9
V
V
GS1  
GS2  
Quiescent Current  
Temperature Compensation  
NC  
GND  
10  
11  
13  
12  
V
(1)  
V
DS1  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.  
© Freescale Semiconductor, Inc., 2008--2009, 2011. All rights reserved.  

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