Datasheet > C3D02060A_13

C3D02060A_13

更新时间： 2024-10-30 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	937K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D02060A_13 数据手册

C3D02060A

V_RRM

600 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =ꢀꢀ4ꢀA

™

Z-Rec RectifieR

Q_cꢀ ꢀꢀꢀ=ꢀꢀ

4.8ꢀnC

Features

Package

•ꢀ 600-VoltꢀSchottkyꢀRectiﬁer

•ꢀ OptimizedꢀforꢀPFCꢀBoostꢀDiodeꢀApplication

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-220-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

ꢀ

C3D02060A

TO-220-2

C3D02060

ꢀ

-ꢀTypicalꢀPFCꢀP_outꢀ:ꢀ300W-450W

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

600

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

T_C=25˚C

T_C=135˚C

T_C=162˚C

I_F

ContinuousꢀForwardꢀCurrent

T_C=25˚C,ꢀt_P=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

T_C=25˚C,ꢀt_P=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3

I_FSM

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

T_C=25˚C,ꢀt_P=10ꢀµS,ꢀPulseꢀ

39.5

T_C=25˚C

T_C=110˚C

P_tot

PowerꢀDissipation

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

TO-220ꢀMountingꢀTorque

˚C

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

C3D02060A Rev. D

12 3 4 5 6

中文翻译

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