Datasheet > C2M0080170P

C2M0080170P

更新时间： 2024-09-26 01:24:59

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1140K
描述
Silicon Carbide Power MOSFET C2M MOSFET Technology

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中文翻译

获取价格

数据手册

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C2M0080170P 数据手册

V_DS

I_D

R_DS(on)

1700 V

40 A

25˚C

C2M0080170P

80 mΩ

Silicon Carbide Power MOSFET

C2M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

TAB

Drain

•ꢀ Optimized package with separate driver source pin

•ꢀ 8mm of creepage distance between drain and source

•ꢀ High blocking voltage with low On-resistance

•ꢀ High speed switching with low capacitances

•ꢀ Easy to parallel and simple to drive

•ꢀ Halogen Free, RoHS compliant

Beneﬁts

Drain

(Pin 1, TAB)

•ꢀ Reduce switching losses and minimize gate ringing

•ꢀ Higherꢀsystemꢀefﬁciency

•ꢀ Reduced cooling requirements

•ꢀ Increased power density

•ꢀ Increased system switching frequency

Gate

(Pin 4)

Driver

Source

(Pin 3)

Power

Source

(Pin 2)

Applications

•ꢀ 1500V Solar Inverters

•ꢀ Switch Mode Power Supplies

•ꢀ High voltage DC/DC Converters

•ꢀ Capacitor discharge

Marking

Part Number

Package

C2M0080170P

TO-247-4 Plus

C2M0080170P

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

1700

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

V_DSmax

V_GSmax

V_GSop

ACꢀ(fꢀ>1ꢀHz)

Note: 1

Note: 2

Gate - Source Voltage

-10/+25

-5/+20

Static

Fig. 19

V_GS= 20 V, T_C=ꢀ25˚C

V_GS= 20 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

Fig. 22

Fig. 20

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

277

T_C=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C

Power Dissipation

˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mmꢀ(0.063”)ꢀfromꢀcaseꢀforꢀ10s

T_L

Noteꢀ(1):ꢀꢀWhenꢀusingꢀMOSFETꢀBodyꢀDiodeꢀV_GSmax= -5V/+25V

Noteꢀ(2):ꢀꢀMOSFETꢀcanꢀalsoꢀsafelyꢀoperateꢀatꢀ0/+20V

C2M0080170P Rev. A, 05-2018

12 3 4 5 6 7...10

中文翻译

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